1 CMF10120D- silicon carbide power mosfet z -f e t tm m osfet n-channel enhancement mode features ? high speed switching with low capacitances ? high blocking voltage with low r ds(on) ? easy to parallel and simple to drive ? avalanche ruggedness ? resistant to latch-up ? halogen free, rohs compliant benefts ? higher system effciency ? reduced cooling requirements ? increased system switching frequency applications ? solar inverters ? high voltage dc/dc converters ? motor drives ? switch mode power supplies package to-247-3 maximum ratings (t c = 25?c unless otherwise specifed) symbol parameter value unit test conditions note i d continuous drain current 24 a v gs @20v, t c = 25?c fig. 10 13 v gs @20v, t c = 100?c i dpulse pulsed drain current 49 a pulse width t p limited by t jmax t c = 25?c e as single pulse avalanche energy 1.2 j i d = 10a, v dd = 50 v, l = 20 mh t ar limited by t jmax fig. 15 e ar repetitive avalanche energy 0.8 j i ar repetitive avalanche current 10 a i d = 10a, v dd = 50 v, l = 15 mh t ar limited by t jmax v gs gate source voltage -5/+25 v p tot power dissipation 134 w t c =25?c fig. 9 t j , t stg operating junction and storage temperature -55 to +135 ?c t l solder temperature 260 ?c 1.6mm (0.063) from case for 10s m d mounting torque 1 8.8 nm lbf-in m3 or 6-32 screw v ds = 1200 v i d(max) = 24 a r ds(on) = 160m ? part number package CMF10120D to-247-3 CMF10120D rev. a
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain-source breakdown voltage 1200 v v gs = 0v, i d = 50a v gs(th) gate threshold voltage 2.4 3.5 v v ds = v gs , i d = 0.5 ma fig. 11 3.1 4.1 v ds = v gs , i d = 1.0 ma 1.8 v v ds = v gs , i d = 0.5 ma, t j = 135oc 2.3 v v ds = v gs , i d = 1.0 ma, t j = 135oc i dss zero gate voltage drain current 0.5 50 a v ds = 1200v, v gs = 0v 5 150 v ds = 1200v, v gs = 0v, t j = 135oc i gss gate-source leakage current 0.25 a v gs = 20v, v ds = 0v r ds(on) drain-source on-state resistance 160 200 m ? v gs = 20v, i d = 10a fig. 3 190 240 v gs = 20v, i d = 10a, t j = 135oc g fs transconductance 4.2 s v ds = 20v, i ds = 10a fig. 6 3.9 v ds = 20v, i ds = 10a, t j = 135oc c iss input capacitance 928 pf v gs = 0v v ds = 800v f = 1mhz v ac = 25mv fig. 13 c oss output capacitance 63 c rss reverse transfer capacitance 7.5 e oss c oss stored energy 32 j fig 14 t d(on)v turn-on delay time 8.8 ns v dd = 800v, v gs = 0/20v i d = 10a r g(ext) = 2.5, r l = 40 timing relative to v ds fg. 17 t fv fall time 21 t d(off)v turn-off delay time 38 t rv rise time 34 r g internal gate resistance 13.6 f = 1mhz , v ac = 25mv built-in sic body diode characteristics symbol parameter typ. max. unit test conditions note v sd diode forward voltage 3.5 v v gs = -5v, i f = 5a, t j = 25oc 3.1 v gs = -2v, i f = 5a, t j = 25oc t rr reverse recovery time 138 ns v gs = -5v, i f = 10a, t j = 25oc v r = 800v, d i f /d t= 100a/ s fig. 22 q rr reverse recovery charge 94 nc i rrm peak reverse recovery current 1.57 a thermal characteristics symbol parameter typ. max. unit test conditions note r jc thermal resistance from junction to case 0.66 0.82 k/w fig. 7 r cs case to sink, w/ thermal compound 0.25 r ja thermal resistance from junction to ambient 40 gate charge characteristics symbol parameter typ. max. unit test conditions note q gs gate to source charge 11.8 nc v dd = 800v, v gs = 0/20v i d =10a per jedec24 pg 27 fig.12 q gd gate to drain charge 21.5 q g gate charge total 47.1 CMF10120D rev. a
3 0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40 45 50 r ds(on) (m ? ) i d (a) v gs = 20 v 135 o c 25 o c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 normalized r ds(on) t j ( o c) v gs = 20 v 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 7 8 9 10 11 12 i d (a) v ds (v) 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 7 8 9 10 11 12 i d (a) v ds (v) figure 2. typical output characteristics t j = 135oc typical performance figure 4. on-resistance vs. drain current figure 6. typical transfer characteristics figure 1. typical output characteristics t j = 25oc figure 3. normalized on-resistance vs. temperature 0 100 200 300 400 500 600 700 800 10 12 14 16 18 20 r ds(on) (m ? ) v gs (v) i d = 10 a t j = 25 o c t j = 135 o c 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 i d (a) v gs (v) 25 o c 135 o c v d = 20 v figure 5. on-resistance vs. gate voltage CMF10120D rev. a
4 typical performance figure 8. safe operating area figure 11. gate threshold voltage vs. temperature figure 9. power dissipation derating curve 100e - 6 1e - 3 10e - 3 100e - 3 1 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 z thjc ( o c/w) t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse dc: 0.1 1 10 100 1 10 100 1000 i d (a) v ds (v) limited by r ds(on) dc t p 1 s t p = 10 s t p = 100 s t p = 1 ms t p = 10 ms 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 p d (w) t c ( o c) 0 5 10 15 20 25 0 25 50 75 100 125 150 i d (a) t c ( o c) figure 7. transient thermal impedance (junction - case) with duty cycle 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 - 75 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j ( o c) i d = 0.5 ma i d = 1 ma figure 10. continuous current derating curve - 5 0 5 10 15 20 25 0 10 20 30 40 50 v gs (v) gate charge (nc) i d = 10 a v dd = 800 v figure 12. typical gate charge characteristics (25c) CMF10120D rev. a
5 typical performance figure 13a and 13b. typical capacitances vs. drain voltage at v gs = 0v and f = 1 mhz figure 16. resistive switching times vs. external r g at v dd = 400v, i d = 10a figure 14. typical c oss stored energy 1 10 100 1000 10000 0 20 40 60 80 100 120 140 160 180 200 capacitance (pf) v ds (v) c iss c oss c rss 1 10 100 1000 10000 0 100 200 300 400 500 600 700 800 capacitance (pf) v ds (v) c iss c oss c rss 0 5 10 15 20 25 30 35 40 0 100 200 300 400 500 600 700 800 e oss ( j) v ds (v) 0 500 1000 1500 2000 2500 0 1 2 3 4 5 6 7 8 9 10 11 0 0.001 0.002 0.003 0.004 0.005 0.006 v ds (v) i d (a) time (sec) i d v ds v gs = 0/20v v dd = 50v l = 20 mh e as = 1.2 j 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 time (nsec) external gate resistor ( ) t d(on)v t fv t rv t d(off)v v gs = 0/20v v dd = 400v r l = 40 ? i d = 10 a t a = 25 o c figure 15. typical unclamped inductive switching waveforms showing avalanche capability 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 time (nsec) external gate resistor ( ) t d(on)v t fv t rv t d(off)v v gs = 0/20v v dd =800v r l = 80 ? i d = 10 a t a = 25 o c figure 17. resistive switching times vs. external r g at v dd = 800v, i d = 10a CMF10120D rev. a
6 typical performance figure 20. clamped inductive switching waveform test circuit 0 50 100 150 200 250 300 350 4 5 6 7 8 9 10 11 switching energy (j) peak drain current (a) e tot,sw e off e on v gs = 0/20v r g = 15 ? tot v dd = 800v l = 856 h fwd: c4d05120a t a = 25 o c 0 50 100 150 200 250 300 350 400 450 0 25 50 75 100 125 150 switching energy (j) t j ( o c) e tot,sw e on e off v gs = 0/20v r g = 20 ? tot v dd = 800v l = 856 h fwd: c4d05120a i d = 10 a figure 21. switching test waveforms for transition times figure 18. clamped inductive switching energy vs. drain current (fig. 20) figure 19. clamped inductive switching energy vs. junction temperature (fig 20) 800v + - 42.3f 856h CMF10120D c4d05120a 5a, 1200v sic schottky 90% 10% v ds v gs t on t off t fv t d(on)v t d(off)v t rv CMF10120D rev. a
7 10% irr v cc t rr irr ic vpk tx 10% v cc qrr= trr id dt tx diode reverse recovery energy diode recovery waveforms erec= t2 id dt t1 t1 t2 test circuit diagrams and waveforms 800v 42.3f 856h CMF10120D CMF10120D + - fig 22. body diode recovery test fig 23. body diode recovery waveform for official use only C not cleared for open release for official use only C not cleared for open release e a = 1/2l x i d 2 fig 24. unclamped inductive switching test circuit fig 25. unclamped inductive switching waveform for avalanche energy esd test total devices sampled resulting classifcation esd-hbm all devices passed 1000v 2 (>2000v) esd-mm all devices passed 400v c (>400v) esd-cdm all devices passed 1000v iv (>1000v) esd ratings CMF10120D rev. a
8 8 the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic pollutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electronic equipment (rohs), as amended through april 21, 2006. recommended solder pad layout package dimensions package to-247-3 pos inches millimeters min max min max a .605 .635 15.367 16.130 b .800 .831 20.320 21.10 c .780 .800 19.810 20.320 d .095 .133 2.413 3.380 e .046 .052 1.168 1.321 f .060 .095 1.524 2.410 g .215 typ 5.460 typ h .175 .205 4.450 5.210 j .075 .085 1.910 2.160 k 6? 21? 6? 21? l 4? 6? 4? 6? m 2? 4? 2? 4? n 2? 4? 2? 4? p .090 .100 2.286 2.540 q .020 .030 .508 .762 r 9? 11? 9? 11? s 9? 11? 9? 11? t 2? 8? 2? 8? u 2? 8? 2? 8? v .137 .144 3.487 3.658 w .210 .248 5.334 6.300 x .502 .557 12.751 14.150 y .637 .695 16.180 17.653 z .038 .052 0.964 1.321 aa .110 .140 2.794 3.556 bb .030 .046 0.766 1.168 cc .161 .176 4.100 4.472 w x y z aa bb cc to-247-3 the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic pollutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electronic equipment (rohs), as amended through april 21, 2006. (1) (2) (3) part number package marking CMF10120D to-247-3 cmf10120 this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2010-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec and z-fet are trademarks of cree, inc. CMF10120D rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power
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